2024. 08.28 (수) ~ 2024. 08.30 (금)
군산새만금컨벤션센터(GSCO)
제목 | Development of a Depth Profiling Method for OLED Materials Using LDI-TOF-MS |
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작성자 | 송병헌 (ASTA Inc) |
발표구분 | 포스터발표 |
발표분야 | 1. Fundamental & Instrumentation |
발표자 |
송병헌 (ASTA) |
주저자 | 송병헌 (ASTA) |
교신저자 |
송병헌 (ASTA) 오주연 (ASTA) |
저자 |
송병헌 (ASTA) 김현식 (ASTA) 강송희 (KETI) 오주연 (ASTA) 이찬재 (KETI) |
Laser Desorption Ionization Time-of-Flight Mass Spectrometry (LDI TOF-MS) can be utilized as Matrix Assisted Laser Desorption Ionization (MALDI) for the analysis of high molecular weight biomaterials, depending on the sample preparation methods. Recently, the application of LDI TOF-MS has expanded significantly, as LDI enables direct analysis of materials and devices in display, secondary batteries, and semiconductors. The technique is particularly important for analyzing OLED display panels with multilayer organic films, offering high sensitivity and rapid analysis. Its 5 μm spatial resolution is highly effective for defect analysis, enabling direct comparison between defective and normal areas without requiring separate sample extraction, making it a highly convenient method. Given the multilayered structure of OLEDs, ongoing experiments are essential to deepen the understanding of each individual layer. However, the extremely thin nature of these layers- ranging from a few nanometers to tens of nanometers- presents significant challenges for single-layer analysis. By optimizing various optical conditions for laser-based depth profiling, this study confirmed the potential of LDI TOF-MS for such analyses. This technique may provide 3D material analysis due to its fast mass imaging spectrometry and offers the advantage of rapid data acquisition compared to traditional MS equipment. This study presents foundational results from the analysis of OLEDs using LDI TOF-MS and explores various methods for depth profiling, including point analysis, mass imaging analysis, and surface etching methods. These will provide a foundation for the future development of depth profiling techniques for advanced electronic material surfaces.
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